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== Substrate preparation ==
== Substrate preparation ==
An appropriate EBL resist must naturally be applied to the substrate. DTU Nanolab supplies a number of standard resists, please consult the table below. The default positive EBL resist is AR-P 6200.09 (CSAR).  
An appropriate EBL resist must naturally be applied to the substrate. DTU Nanolab supplies a number of standard resists, please consult the table below. The default positive EBL resist is AR-P 6200.09 (CSAR). CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for easy spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4.
 
 
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-
 
|-
?
|-
 
|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spin Coater'''
|'''Thinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
 
|-
 
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR AR-P 6200]]'''
|Positive
|[http://www.allresist.com AllResist]
|Standard positive resist, very similar to ZEP520.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-P6200_CSAR62english_Allresist_product-information.pdf AR-P 6200 info]
|Gamma E-beam & UV or Labspin 2/3
|Anisole
|
*AR-600-546
*AR-600-548
*N50
*MIBK:IPA
|IPA
|
*AR-600-71
*Remover 1165
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br>
 
|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ARN8200|Medusa AR-N 8200]]'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam and DUV sensitive resist.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/SXAR-N8200-1_english_Allresist_product_information.pdf AR-N 8200 info]
|Labspin 2/3
|AR 600-07
|AR 300-47:DIW (1:1)
|DIW
|BOE
|
 
|-
|-style="background:LightGrey; color:black"
|'''AR-N 7500'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-N7500_english_Allresist_product-information.pdf AR-N 7500 info]
|Labspin 2/3
|PGMEA
|
*AR 300-47:DIW (4:1)
*MIF726:DIW (8:5)
|DIW
|
*AR 300-73
*O2 plasma
|
 
|}
 
<br/>


== Development ==
== Development ==
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography/EBLLandingpage"