Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
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It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | It is important to keep in mind that this exposure time is valid only for a specific combination of exposure source and optical sensor, as well as for a specific development process. | ||
==KS Aligner== | |||
The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365 nm with a FWHM of 7 nm. Unless otherwise stated, the exposure doses given here are for standard silicon wafers. | |||
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!Thickness | |||
!Dose | |||
!Development | |||
!Comments | |||
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!rowspan="3"|AZ 5214E<br><span style="color:red">Old German version</span> | |||
|1.5 µm | |||
|72 mJ/cm<sup>2</sup> | |||
|rowspan="3"|Single puddle, 60 s | |||
|rowspan="3"|Positive process | |||
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|2.2 µm | |||
|80 mJ/cm<sup>2</sup> | |||
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|4.2 µm | |||
|160 mJ/cm<sup>2</sup> | |||
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!AZ 4562<br><span style="color:red">Old German version</span> | |||
|10 µm | |||
|480-540 mJ/cm<sup>2</sup> | |||
|Multiple puddle, 4 x 60 s | |||
|Multiple exposure with 10-15 s pauses is recommended. | |||
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!rowspan="3"|AZ MiR 701<br><span style="color:red">Old PFOA containing version</span> | |||
|1 µm | |||
|~180 mJ/cm<sup>2</sup> | |||
|Single puddle, 60 s | |||
|rowspan="2"|PEB: 60 s at 110°C | |||
Preliminary results | |||
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|2 µm | |||
|~200 mJ/cm<sup>2</sup> | |||
|Single puddle, 60 s | |||
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|4 µm | |||
|~400 mJ/cm<sup>2</sup> | |||
|Single puddle, 60 s | |||
|rowspan="1"|PEB: 90 s at 110°C | |||
Preliminary results | |||
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!AZ nLOF 2020 | |||
|2 µm | |||
|100-120 mJ/cm<sup>2</sup> | |||
|Single puddle, 60 s | |||
|PEB: 60 s at 110°C | |||
Side wall angle ~15°. For lover angle, develop 30 s (~5°) | |||
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