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==Samples and Process Specifications==
==Samples and Process Specifications==


The rapid thermal processor, with a base pressure of 10<sup>-6</sup> mbar, is a research tool. As such, there are some parameters and details to consider.
The RTP Anealsys, with a base pressure of 10<sup>-6</sup> mbar, is a research tool. As such, there are some parameters and details to consider.


{| border="1" style="text-align: center; width: 320px; height: 200px;"
{| border="2" cellspacing="0" cellpadding="2"  
|colspan="6" style="text-align: center;" style="background:LightGrey" |'''Header'''
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>SEM Supra 3 (Supra 40VP SEM)</b>
|-
|-
|colspan="6" style="text-align: center;" style="background: #efefef;" |'''Row'''
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Purpose
|style="background:LightGrey; color:black"|Imaging and measurement of
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
|-
|-
|rowspan="10" style="text-align: center;" style="background: #efefef;" |'''Col'''
!style="background:silver; color:black;" align="center" width="60"|Location
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Cleanroom of DTU Nanolab
|-
|-
!scope="row"|
!style="background:silver; color:black;" align="center" width="60"|Performance
!|1
|style="background:LightGrey; color:black"|Resolution
!|2
|style="background:WhiteSmoke; color:black"|
!|3
*1-2 nm (limited by vibrations)
!|4
The resolution is strongly dependent on the type of sample and the skills of the operator.
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Instrument specifics
|style="background:LightGrey; color:black"|Detectors
|style="background:WhiteSmoke; color:black"|
*Secondary electron (Se2)
*Inlens secondary electron (Inlens)
*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
*Variable pressure secondary electron (VPSE)
|-
|-
!A
|style="background:LightGrey; color:black"|Stage
|A1
|style="background:WhiteSmoke; color:black"|
|A2
*X, Y: 130 &times; 130 mm
|A3
*T: -4 to 70<sup>o</sup>
|A4
*R: 360<sup>o</sup>
*Z: 50 mm
|-
|-
|style="background:LightGrey; color:black"|Electron source
|style="background:WhiteSmoke; color:black"|
*FEG (Field Emission Gun) source
|-
|-
!B
|style="background:LightGrey; color:black"|Operating pressures
|B1
|style="background:WhiteSmoke; color:black"|
|B2
*Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
|B3
*Variable at Low vacuum (0.1 mbar - 2 mbar)
|B4
|-
|-
|style="background:LightGrey; color:black"|Options
|style="background:WhiteSmoke; color:black"|
*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
|-
|-
!C
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|C1
|style="background:LightGrey; color:black"|Batch size
|C2
|style="background:WhiteSmoke; color:black"|
|C3
*Up to 6" wafer with full view
|C4
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Any standard cleanroom material
|-
|}
|}


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