Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
| Line 60: | Line 60: | ||
=== Nanoholes === | === Nanoholes === | ||
The nanoholes are 200nm wide, with 400nm pitch with 100 nm Al<sub>2</sub>O<sub>3</sub> mask. During the recipe, Pegasus 2 conditions were: Outer EM=10A, T=20°C, no clamping, no He BGC and all heaters OFF. | The nanoholes are 200nm wide, with 400nm pitch with 100 nm Al<sub>2</sub>O<sub>3</sub> mask. During the recipe, Pegasus 2 conditions were: Outer EM=10A, T=20°C, no clamping, no He BGC and all heaters OFF. | ||
[[File:nH R-power.png|400px|left|thumb|'''''Nanoholes profile when varying the removal power.''''']] | |||
{| border="1" style="text-align: center; width: 650px; height: 200px" | {| border="1" style="text-align: center; width: 650px; height: 200px" | ||
|+ 200nm nanoholes recipe from March 2022 | |+ 200nm nanoholes recipe from March 2022 | ||
| Line 75: | Line 76: | ||
|} *The R-power value was changed and observed. | |} *The R-power value was changed and observed. | ||
[[File:nH E-time.png|400px|left|thumb|'''''Nanoholes profile when varying the ramping E-time .''''']] | [[File:nH E-time.png|400px|left|thumb|'''''Nanoholes profile when varying the ramping E-time .''''']] | ||