Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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*[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | *[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]] | ||
*[[/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]] | *[[/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]] | ||
==Comparison of wet Silicon Nitride etch and RIE etch for etching of Silicon Nitride== | |||
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! Wet Silicon Nitride etch | |||
! RIE | |||
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| What is it good for: | |||
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*Isotropic etch | |||
*Good for removing all nitride on a wafer surface without a mask | |||
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*Can etch anisotropic: vertical sidewalls | |||
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|Possible masking materials: | |||
|? | |||
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*Photoresist | |||
*Silicon Oxide | |||
*Aluminium | |||
*Chromium (ONLY RIE2!) | |||
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|Process volume | |||
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*25 wafers at a time | |||
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*1 wafer at a time | |||
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|Size of substrate | |||
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*4" wafers | |||
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4" wafers or smaller pieces | |||
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