Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
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(0.04 nm/s using HiPIMS - PC3, Src3) | (0.04 nm/s using HiPIMS - PC3, Src3) | ||
|Deposition rate is 0. | |Note! bad uniformity | ||
Deposition rate is 0.03 nm/s using big glass chamber | |||
Deposition rate is 0.2-0.9 nm/s (current dependent) using small glass chamber | |||
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'''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.'' | '''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.'' | ||