Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
| Line 31: | Line 31: | ||
|Ar ion beam | |Ar ion beam | ||
|None | |None | ||
| | |RF bias on a substrate | ||
|None | |None | ||
|- | |- | ||
| Line 118: | Line 118: | ||
Wait for low base pressure (3-5 10<sup>-7</sup> Torr) | Wait for low base pressure (3-5 10<sup>-7</sup> Torr) | ||
|Deposition rate is 0.107 nm/s for 150W and 3mTorr (Src3, DC) | |Deposition rate is 0.107 nm/s for 150W and 3mTorr (Src3, DC) | ||
|Deposition rate is 0. | |Deposition rate is 0.124 nm/s for 140W and 3mTorr | ||
|Deposition rate is 0.083 nm/s for 150W and 3mTorr | |Deposition rate is 0.083 nm/s for 150W and 3mTorr | ||
|} | |} | ||
'''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.'' | '''*''' ''For thicknesses above 20 nm talk to staff (write to thinfilm@nanolab.dtu.dk), as the heat and subsequent pressure rise means the deposition needs to be carried out in steps.'' | ||