Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
| Line 37: | Line 37: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to | |10Å to 20nm* | ||
|10Å to 600nm | |10Å to 600nm | ||
|10Å to 600nm | |10Å to 600nm | ||
| Line 115: | Line 115: | ||
| Substrate gets hot during deposition | | Substrate gets hot during deposition | ||
(for a 60 nm film it rose above 123 C) | (for a 60 nm film it rose above 123 C) | ||
Wait for low base pressure (3-5 10<sup>-7</sup> Torr) | |||
|Deposition rate is 0.083 nm/s for 150W and 3mTorr | |Deposition rate is 0.083 nm/s for 150W and 3mTorr | ||
|Deposition rate is 0.083 nm/s for 150W and 3mTorr | |Deposition rate is 0.083 nm/s for 150W and 3mTorr | ||