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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Carbide: Difference between revisions

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== Deposition of Silicon Carbide ==
== Deposition of Silicon Carbide ==


Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]]:
Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using [[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]] (Src5-RF):


*[[/Deposition of SiC in Sputter-System Lesker|Deposition of SiC in Sputter-System (Lesker)]]
*[[/Deposition of SiC in Sputter-System Lesker|Deposition of SiC in Sputter-System (Lesker)]]

Revision as of 13:44, 9 January 2025

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Deposition of Silicon Carbide

Silicon Carbide (SiC) can be deposited by RF-sputtering method. So far the process has been tested only using Sputter-System (Lesker) (Src5-RF):

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