Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions

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!Parameter
!Parameter
|Recipe name: '''Slow Etch'''
|Recipe name: '''Slow Etch'''
|Recipe name: '''Slow Etch2'''
    
    
|-
|-
|Coil Power [W]
|Coil Power [W]
|350
|350
|200


|-
|-
|Platen Power [W]
|Platen Power [W]
|25
|25
|50


|-
|-
|Platen temperature [<sup>o</sup>C]
|Platen temperature [<sup>o</sup>C]
|20
|20
|20


|-
|-
|H2 flow [sccm]
|H2 flow [sccm]
|15
|15
|15


|-
|-
|CF<sub>4</sub> flow [sccm]
|CF<sub>4</sub> flow [sccm]
|30
|30
|30


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|Pressure [mTorr]
|Pressure [mTorr]
|3
|3
|10


|-
|-
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|Etch of SRN
|Etch of SRN
|'''~43nm/min [measured 39-50 nm/min over a 6" wafer]
|'''~43nm/min [measured 39-50 nm/min over a 6" wafer]
|'''


|-
|-
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|Etch rate of SiO2
|Etch rate of SiO2
|'''~42nm/min [41-43 nm/min over a 6" wafer]
|'''~42nm/min [41-43 nm/min over a 6" wafer]
|


|-
|-
|Etch rate of DUV resist]
|Etch rate of DUV resist]
|'''~nm/min  
|'''~nm/min  
|




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|-
|-
|Profile [<sup>o</sup>]
|Profile [<sup>o</sup>]
|
|
|
|-
|-

Revision as of 08:50, 27 January 2023

The slow etch

The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape

Parameter Recipe name: Slow Etch Recipe name: Slow Etch2
Coil Power [W] 350 200
Platen Power [W] 25 50
Platen temperature [oC] 20 20
H2 flow [sccm] 15 15
CF4 flow [sccm] 30 30
Pressure [mTorr] 3 10
Typical results Test Results
Etch of SRN ~43nm/min [measured 39-50 nm/min over a 6" wafer]
Etch rate of Si3N4 ~49nm/min [4" on carrier]
Etch rate of SiO2 ~42nm/min [41-43 nm/min over a 6" wafer]
Etch rate of DUV resist] ~nm/min


Profile [o]