Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch

The slow etch

The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape

Parameter	Recipe name: Slow Etch
Coil Power [W]	350
Platen Power [W]	25
Platen temperature [oC]	20
H2 flow [sccm]	15
CF4 flow [sccm]	40
Pressure [mTorr]	3

Typical results	Test Results
Etch of SRN	~43nm/min [measured 39-50 nm/min over a 6" wafer]
Etch rate of Si3N4	~49nm/min [4" on carrier]
Etch rate of SiO2	~42nm/min [41-43 nm/min over a 6" wafer]
Etch rate of DUV resist]	~nm/min
Profile [o]

• Map of etch rate measurements
• 
  Etch rate map of SiO2 etch on 6" wafer
• 
  Etch rate map of SRN etch on 6" wafer