Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
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=The slow etch= | =The slow etch= | ||
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape | The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape | ||
{| border="2" cellspacing="2" cellpadding="3" | |||
!Parameter | |||
|Recipe name: '''Slow Etch''' | |||
|- | |||
|Coil Power [W] | |||
|350 | |||
|- | |||
|Platen Power [W] | |||
|50 | |||
|- | |||
|Platen temperature [<sup>o</sup>C] | |||
|20 | |||
|- | |||
|He flow [sccm] | |||
|0 | |||
|- | |||
|CF<sub>4</sub> flow [sccm] | |||
|40 | |||
|- | |||
|Pressure [mTorr] | |||
|4 | |||
|- | |||
|} | |||
{| border="2" cellspacing="2" cellpadding="3" | |||
!Typical results | |||
!Test Results | |||
|- | |||
|Etch of Si3N4 with DUV mask | |||
| | |||
|- | |||
|Etch rate of Si3N4 | |||
|'''~nm/min | |||
|- | |||
|Etch rate of Silicon | |||
|'''~nm/min | |||
|- | |||
|Etch rate of DUV resist] | |||
|'''~nm/min | |||
|- | |||
|Profile [<sup>o</sup>] | |||
| | |||
|- | |||
|} | |||
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Revision as of 14:49, 6 December 2022
The slow etch
The slow etch is designed to etch slow at low powers to etch thin films and to avoid overheating of samples mounted on a carrier with Capton/polyimide tape
Parameter | Recipe name: Slow Etch |
---|---|
Coil Power [W] | 350 |
Platen Power [W] | 50 |
Platen temperature [oC] | 20 |
He flow [sccm] | 0 |
CF4 flow [sccm] | 40 |
Pressure [mTorr] | 4 |
Typical results | Test Results |
---|---|
Etch of Si3N4 with DUV mask | |
Etch rate of Si3N4 | ~nm/min |
Etch rate of Silicon | ~nm/min |
Etch rate of DUV resist] | ~nm/min
|
Profile [o] |