Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/SiO2 Etch: Difference between revisions
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==SiO2 Etch using resist as masking material== | ==SiO2 Etch using resist as masking material== | ||
I | ''This section is done by Berit Herstrøm @Nanolab.dtu if nothing else is stated'' | ||
I have do some development of a SiO2 etch with resist as masking material. I have found this fairly good recipe. For now it is the standard SiO2 etch recipes but I might change the "Standard recipe" a a later time if I find a better one. If you need to etch deeper than 1 micrometer then I advise you to split the etch in several runs with O2 cleans in between (3min TDESC Clean) or else it seems like the the etch rate is going down over time. | |||
*[[/SiO2 etch with resist mask|Click here for more results on the process development on SiO2 etch with DUV resist mask]] | *[[/SiO2 etch with resist mask|Click here for more results on the process development on SiO2 etch with DUV resist mask]] | ||