Specific Process Knowledge/Lithography/SU-8: Difference between revisions
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==Resist description== | |||
SU-8 is an epoxy based negative i-line photoresist with a high contrast. More then 10:1 aspect ratio imaging with vertical sidewalls is one of the widely used properties of this resist. It also has high chemical, plasma and temperature resistance after curing which makes it well suited for permanent use applications. | SU-8 is an epoxy based negative i-line photoresist with a high contrast. More then 10:1 aspect ratio imaging with vertical sidewalls is one of the widely used properties of this resist. It also has high chemical, plasma and temperature resistance after curing which makes it well suited for permanent use applications. | ||
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You can also take a look at a Ph.D thesis on the topic that you can find in Process2Share: http://process2share.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Photolithography/SU8#Reports] | You can also take a look at a Ph.D thesis on the topic that you can find in Process2Share: http://process2share.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Photolithography/SU8#Reports] | ||
==Pretreatment== | ==Pretreatment== | ||
* To dehydrate the surface, bake in 250C oven at least 30 min, the longer the bake the better. Baking overnight is recommended. | * To dehydrate the surface, bake in 250C oven at least 30 min, the longer the bake the better. Baking overnight is recommended. | ||