Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific_Process_Knowledge/Thin_film_deposition/Wordentec|Wordentec]])
! E-beam evaporation ([[Specific_Process_Knowledge/Thin_film_deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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| E-beam deposition of Pd
| E-beam deposition of Pd
| E-beam deposition of Pd
| E-beam deposition of Pd
| Sputter deposition of Pd
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
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|Ar ion source
|Ar ion source
|none
|none
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
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|0.5 Å/s to 10Å/s
|0.5 Å/s to 10Å/s
|2 Å/s to 10Å/s
|2 Å/s to 10Å/s
|Up to 4.3 Å/s
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Batch size
! Batch size
|
|
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*Up to 6x4" wafers (deposition on one wafer at the time)
*Up to 6x4" wafers (deposition on one wafer at the time)
*smaller wafers and pieces
*smaller wafers and pieces
|
*1x4" wafer or
*1x6" wafer or
*several small samples
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
!Allowed materials
!Allowed materials
|
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
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|
*Silicon oxide
*Silicon oxide
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
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Revision as of 10:51, 1 February 2023

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Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment:


E-beam evaporation (Temescal) E-beam evaporation (Wordentec) Sputter deposition (Sputter-System (Lesker))
General description E-beam deposition of Pd E-beam deposition of Pd Sputter deposition of Pd
Pre-clean Ar ion source none RF Ar clean
Layer thickness 10 Å - 600 nm* 10 Å - 600 nm* 10 Å - 600 nm*
Deposition rate 0.5 Å/s to 10Å/s 2 Å/s to 10Å/s Up to 4.3 Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller wafers and pieces
  • Up to 6x6" wafers (deposition on one wafer at the time)
  • Up to 6x4" wafers (deposition on one wafer at the time)
  • smaller wafers and pieces
  • 1x4" wafer or
  • 1x6" wafer or
  • several small samples
Allowed materials
Comment

* If depositing more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.

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