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Specific Process Knowledge/Etch/Wet Aluminium Etch: Difference between revisions

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===Comparing the two solutions===
===Comparing the two solutions===
 
{| border="2" cellspacing="0" cellpadding="4"  
{| border="2" cellspacing="0" cellpadding="4" align="left"
!  
!  
! Aluminium Etch 1
! Aluminium Etch 1
! Aluminium Etch 2
! Aluminium Etch 2
|-  
|-  
|'''General description'''
|'''General description'''
|
|Etch of pure aluminium
Etch of pure aluminium
|Etch of aluminium + 1.5% Si
|
Etch of aluminium + 1.5% Si
|-
|-
|'''Chemical solution'''
|'''Chemical solution'''
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
|H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2
|PES 77-19-04  
|PES 77-19-04  
|-
|-
|'''Process temperature'''
|'''Process temperature'''
|50 <sup>o</sup>C
|50 <sup>o</sup>C
|20 <sup>o</sup>C
|20 <sup>o</sup>C
|-
|-


|'''Possible masking materials'''
|'''Possible masking materials'''
|
|Photoresist (1.5 µm AZ5214E)
Photoresist (1.5 µm AZ5214E)
|Photoresist (1.5 µm AZ5214E)
|
Photoresist (1.5 µm AZ5214E)
|-
|-
|'''Etch rate'''
|'''Etch rate'''
|
|~100 nm/min (Pure Al)
~100 nm/min (Pure Al)
|~60 nm/min
|
~60 nm/min
|-
|-
|'''Batch size'''
|'''Batch size'''
|
|1-25 wafers at a time
1-25 wafers at a time
|1-25 wafer at a time
|
1-25 wafer at a time
|-
|-
|'''Size of substrate'''
|'''Size of substrate'''
|
|4" wafers
4" wafers
|4" wafers
|
4" wafers
|-
|-
|'''Allowed materials'''
|'''Allowed materials'''
|
|
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== Dry Aluminium Etch ==
==Dry Aluminium Etch==


Our ICP metal etch allows you to dry etch aluminium. See page
Our ICP metal etch allows you to dry etch aluminium. See page
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