Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions
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<gallery caption="Some examples of blazed gratings in fused silica etched with Cr and DUV resist as masking layer " widths="300px" heights="250px"> | <gallery caption="Some examples of blazed gratings in fused silica etched with Cr and DUV resist as masking layer " widths="300px" heights="250px"> | ||
Image:IBE | Image:IBE 30min -Cr1.jpg |'''30 min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm | ||
Image:after IBE 45min_A_34.jpg |'''45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm | Image:after IBE 45min_A_34.jpg |'''45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=400mA<br>*RF power=1300W<br>*I(B)=300mA<br>*V(B)=300V<br>*V(AC,B)=500V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=5sccm<br>*CHF3 flow=15sccm | ||
Image:Edge_1.jpg|'''20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=550mA<br>*RF power=1300W<br>*I(B)=500mA<br>*V(B)=600V<br>*V(AC,B)=400V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=10sccm<br>*CHF3 flow=0sccm | Image:Edge_1.jpg|'''20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings''' <br>*Rotation speed 0 rpm<br>*Angle: -35<br>*I(N)=550mA<br>*RF power=1300W<br>*I(B)=500mA<br>*V(B)=600V<br>*V(AC,B)=400V<br>*Ar(N) flow=5sccm<br>*Ar(B) flow=10sccm<br>*CHF3 flow=0sccm | ||
Revision as of 12:36, 6 September 2022
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- 60nm Barc
- 360nm KRF resist
by bge@nanolab experiments made in June/July 2012
- Some examples of blazed gratings in fused silica etched with Cr and DUV resist as masking layer
-
30 min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
*Rotation speed 0 rpm
*Angle: -35
*I(N)=400mA
*RF power=1300W
*I(B)=300mA
*V(B)=300V
*V(AC,B)=500V
*Ar(N) flow=5sccm
*Ar(B) flow=5sccm
*CHF3 flow=15sccm -
45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
*Rotation speed 0 rpm
*Angle: -35
*I(N)=400mA
*RF power=1300W
*I(B)=300mA
*V(B)=300V
*V(AC,B)=500V
*Ar(N) flow=5sccm
*Ar(B) flow=5sccm
*CHF3 flow=15sccm -
20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
*Rotation speed 0 rpm
*Angle: -35
*I(N)=550mA
*RF power=1300W
*I(B)=500mA
*V(B)=600V
*V(AC,B)=400V
*Ar(N) flow=5sccm
*Ar(B) flow=10sccm
*CHF3 flow=0sccm -
15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
*Rotation speed 0 rpm
*Angle: -35
*I(N)=400mA
*RF power=1300W
*I(B)=300mA
*V(B)=300V
*V(AC,B)=500V
*Ar(N) flow=5sccm
*Ar(B) flow=5sccm
*CHF3 flow=15sccm
