Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE process trends: Difference between revisions
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#Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. 500 eV is considered medium energy.<br> | #Set beam energy —a rough guide is, the higher the energy the rougher the surface as seen on an SEM. 500 eV is considered medium energy.<br> | ||
#Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br> | #Then starting with beam current of 300mA increase the value until you reach the value where the PR is getting burnt.<br> | ||
#Adjust beam current to give optimum etch rate without overheating the sample.< | #Adjust beam current to give optimum etch rate without overheating the sample.<br> | ||
#Adjust Accelerator voltage to get uniformity. Note that as this will change beam divergence, the sample temperature will change. | #Adjust Accelerator voltage to get uniformity. Note that as this will change beam divergence, the sample temperature will change. | ||