Specific Process Knowledge/Thermal Process/Oxidation/Dry oxidation C1 furnace: Difference between revisions
No edit summary |
|||
| Line 9: | Line 9: | ||
===Dry Oxidation uniformity for | ===Dry Oxidation uniformity for 4" wafers=== | ||
A dry oxidation has been done with 30 | A dry oxidation has been done with 30 4" wafers in the quartz boat in the furnace to get an idea of how uniform the oxide layer is from wafer to wafer over the boat. | ||
The following parameters were used for the oxidation: | The following parameters were used for the oxidation: | ||
| Line 26: | Line 26: | ||
[[image:C1thickness.jpg|500x500px|left|thumb|xxx]] | [[image:C1thickness.jpg|500x500px|left|thumb|xxx]] | ||
<br clear="all" /> | <br clear="all" /> | ||