Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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== InP etch with Cl2/H2 and a Si carrier wafer (2019) == | == InP etch with Cl2/H2 and a Si carrier wafer (2019) == | ||
''Work done by Berit Herstrøm @Nanolab spring 2019'' | ''Work done by Berit Herstrøm @Nanolab spring 2019'' | ||
*Sidewall passivation assisted by a silicon coverplate during and HBr | |||
inductively coupled plasma etching of InP for photonic devices | |||
S. Bouchoule, G. Patriarche, S. Guilet, L. Gatilova, L. Largeau, and P. Chabert | |||
Citation: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, | |||
Measurement, and Phenomena 26, 666 (2008); doi: 10.1116/1.289845 | |||
{| border="1" cellspacing="2" cellpadding="3" | {| border="1" cellspacing="2" cellpadding="3" | ||
|'''Recipe name''' | |'''Recipe name''' | ||