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*[[/ICP metal|Titanium Oxide etch using ICP metal]]
*[[/ICP metal|Titanium Oxide etch using ICP metal]]
==Comparison of Aluminium Etch Methods [[Image:section under construction.jpg|70px]]==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Etch/Wet Aluminium Etch|Aluminium Etch]]
![[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer TMAH manual]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]]
|-
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Wet etch of Al
|Wet etch/removal: TMAH<br>
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-
|-
|-style="background:LightGrey; color:black"
!Etch rate range
|
*~60-100nm/min
|
*~30nm/min (pure Al)
|
*~350 nm/min (depending on features size and etch load)
|
*~30nm/min (not tested yet)
|-
|-
|-style="background:WhiteSmoke; color:black"
!Etch profile
|
*Isotropic
|
*Isotropic
|
*Anisotropic (vertical sidewalls)
|
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-
|-style="background:LightGrey; color:black"
!Substrate size
|
*100 mm wafers (in bath)
*150 mm wafers (in bath)
*Any size (in beaker)
|
*Chips (6-60 mm)
*100 mm wafers
*150 mm wafers
|
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|In 'Aluminium Etch' bath:
*See Cross Contamination Sheet for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=381 Aluminium Etch] bath (require login)
In beaker:
*Any material
|
*Every thing that is allowed in the Developer: TMAH Manual
|
*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
*Silicon
*Silicon oxides
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|}

Revision as of 12:42, 13 May 2025

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Etch of Titanium oxide has been test in the ICP metal etcher.


Comparison of Aluminium Etch Methods

Aluminium Etch Developer TMAH manual ICP metal IBE (Ionfab300+)
Generel description Wet etch of Al Wet etch/removal: TMAH

Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow here

Dry plasma etch of Al Sputtering of Al - pure physical etch.
Etch rate range
  • ~60-100nm/min
  • ~30nm/min (pure Al)
  • ~350 nm/min (depending on features size and etch load)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • 100 mm wafers (in bath)
  • 150 mm wafers (in bath)
  • Any size (in beaker)
  • Chips (6-60 mm)
  • 100 mm wafers
  • 150 mm wafers
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (when set up to 100mm wafers)
  • #1 150mm wafers (when set up to 150mm wafers)

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials In 'Aluminium Etch' bath:

In beaker:

  • Any material
  • Every thing that is allowed in the Developer: TMAH Manual
  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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