Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cpoly4: Difference between revisions
No edit summary |
No edit summary |
||
| Line 1: | Line 1: | ||
<!--Checked for updates on 11/2-2019 - ok/jmli --> | <!--Checked for updates on 11/2-2019 - ok/jmli --> | ||
<!--Page reviewed by jmli 9/8-2022 --> | <!--Page reviewed by jmli 9/8-2022 --> | ||
<!--Checked for updates on 6/2-2013 - ok/jmli --> | |||
{{Template:Author-jmli1}} | |||
{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | {| border="2" cellpadding="0" cellspacing="0" style="text-align:center;" | ||
Latest revision as of 12:43, 6 February 2023
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
| Date | Substrate Information | Process Information | SEM Images | ||||||
|---|---|---|---|---|---|---|---|---|---|
| Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
| 3/12-2014 | 1/4 6" Wafer with 210 nm oxide and 1800 nm polysilicon CB on oxide carrier | standard stepper mask (50 nm barc + 320 nm krf) | Si / 50+ % | Pegasus/jmli | 10 minute TDESC clean + 45 sec barc etch | nanolab/jml/showerhead/Cpoly4, 20 cycles or 2:16 minutes | S004733 | New showerhead |
|
