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Specific Process Knowledge/Lithography/EBeamLithography/eLINE: Difference between revisions

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Notice that this estimate is only the beam dwell time and does not account for beam settling time or stage movement time. Typically process times are 3-4 times higher than the dwell time estimate but this will vary with pattern and writing conditions.
Notice that this estimate is only the beam dwell time and does not account for beam settling time or stage movement time. Typically process times are 3-4 times higher than the dwell time estimate but this will vary with pattern and writing conditions.


[[Image:CurrentAperture.png|800x800px|left|thumb|Typical beam currents [nA] as function of voltage and aperture.]]
The High Current (HC) mode is actived in the Column Control panel.
 
{| border="2" cellspacing="1" cellpadding="1" align="center"
! style="background:orange; color:black" colspan="8" | Typical beam current [nA] as function of acceleration voltage and aperture
|- valign="top"
! style="background:silver; color:black" | Acc. voltage / Aperture
! style="background:silver; color:black" |  7 µm
! style="background:silver; color:black" | 10 µm
! style="background:silver; color:black" | 15 µm
! style="background:silver; color:black" | 20 µm
! style="background:silver; color:black" | 30 µm
! style="background:silver; color:black" | 60 µm
! style="background:silver; color:black" | 120 µm
|- valign="top"
! style="background:lightgrey; color:black" | 10 kV
| style="background:lightgrey; color:black" | 0.01
| style="background:lightgrey; color:black" | 0.02
| style="background:lightgrey; color:black" | 0.06
| style="background:lightgrey; color:black" | 0.10
| style="background:lightgrey; color:black" | 0.23
| style="background:lightgrey; color:black" | 0.99
| style="background:lightgrey; color:black" | 3.87
|- valign="top"
! style="background:Whitesmoke; color:black" | 10 kV HC
| style="background:WhiteSmoke; color:black"| 0.02
| style="background:WhiteSmoke; color:black"| 0.05
| style="background:WhiteSmoke; color:black"| 0.12
| style="background:WhiteSmoke; color:black"| 0.20
| style="background:WhiteSmoke; color:black"| 0.39
| style="background:WhiteSmoke; color:black"| 1.96
| style="background:WhiteSmoke; color:black"| 7.67
|- valign="top"
! style="background:lightgrey; color:black" | 20 kV
| style="background:lightgrey; color:black" | 0.02
| style="background:lightgrey; color:black" | 0.04
| style="background:lightgrey; color:black" | 0.09
| style="background:lightgrey; color:black" | 0.16
| style="background:lightgrey; color:black" | 0.36
| style="background:lightgrey; color:black" | 1.53
| style="background:lightgrey; color:black" | 6.06
|- valign="top"
! style="background:Whitesmoke; color:black" | 20 kV HC
| style="background:WhiteSmoke; color:black"| 0.03
| style="background:WhiteSmoke; color:black"| 0.08
| style="background:WhiteSmoke; color:black"| 0.18
| style="background:WhiteSmoke; color:black"|  0.32
| style="background:WhiteSmoke; color:black"|  0.61
| style="background:WhiteSmoke; color:black"| 3.03
| style="background:WhiteSmoke; color:black"| 11.9
|- valign="top"
! style="background:lightgrey; color:black" | 30 kV
| style="background:lightgrey; color:black" | 0.02
| style="background:lightgrey; color:black" | 0.04
| style="background:lightgrey; color:black" | 0.10
| style="background:lightgrey; color:black" | 0.17
| style="background:lightgrey; color:black" | 0.38
| style="background:lightgrey; color:black" | 1.65
| style="background:lightgrey; color:black" | 6.53
|- valign="top"
! style="background:Whitesmoke; color:black" | 30 kV HC
| style="background:WhiteSmoke; color:black"| 0.04
| style="background:WhiteSmoke; color:black"| 0.09
| style="background:WhiteSmoke; color:black"| 0.19
| style="background:WhiteSmoke; color:black"|  0.34
| style="background:WhiteSmoke; color:black"|  0.64
| style="background:WhiteSmoke; color:black"| 3.20
| style="background:WhiteSmoke; color:black"| 12.6
|}


==Writing fields==
==Writing fields==
Writefield dimension is a trade off between beam shot precision and field stitching. The maximum writefield size is 1000x1000 µm. The beam controller has a limit of 50000 addressable positions along each axis and hence for a 1000x1000 µm writefield the minimum beam pitch is 20 nm. For a 100x100 µm writefield the minimum beam pitch is 2 nm. Thus the precision is higher for smaller writing fields. Smaller writing fields will however fracture a design into more fields and create more field boundaries with higher potential for stitching errors.
Writefield dimension is a trade off between beam shot precision and field stitching. The maximum writefield size is 1000x1000 µm. The beam controller has a limit of 50000 addressable positions along each axis and hence for a 1000x1000 µm writefield the minimum beam pitch is 20 nm. For a 100x100 µm writefield the minimum beam pitch is 2 nm. Thus the precision is higher for smaller writing fields. Smaller writing fields will however fracture a design into more fields and create more field boundaries with higher potential for stitching errors.