Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~26 Å/min | *Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~26 Å/min | ||
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*PECVD nitride: ~ | *PECVD nitride: ~40.0-100.0 nm/min | ||
*Stoichiometric LPCVD nitride: ~0.65-8 nm/min (''Yannick Seis, KU, 2019'') | *Stoichiometric LPCVD nitride: ~0.65-8 nm/min (''Yannick Seis, KU, 2019'') | ||
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