Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

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==Al2O3 etching by bghe@nanolab==
==Al2O3 etching by bghe@nanolab==
===Recipes===
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Al2O3 etch'''
|-
! Parameter
! width="200" | Recipe 1:Al2O3 etch platen only
|-
! BCl<sub>3</sub> (sccm)
| 15
|-
! Ar (sccm)
| 15
|-
! Pressure (mTorr)
| 5
|-
! Coil power (W)
| 0
|-
! Platen power (W)
| 30
|-
! Temperature (<sup>o</sup>C)
| 20
|-
! Spacers (mm)
| 100 mm
|-
|}
===Results===

Revision as of 14:46, 4 August 2022

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Al2O3 etching with the ICP metal

Parameter Recipe name: no name (testing recipe)
Coil Power [W] 1200
Platen Power [W] 200
Platen temperature [oC] 0
BCl3 flow [sccm] 60
Cl2 flow [sccm] 30
Pressure [mTorr] 4


Material to be etched Etch rate using the above parameters
Al2O3
  • ~93nm/min (30s, 1/4 wafer on 6" carrier)
    2017-01-20 bghe@nanolab


Al2O3 etching by sanvis@nanolab

Al2O3 etching by bghe@nanolab

Recipes

Al2O3 etch
Parameter Recipe 1:Al2O3 etch platen only
BCl3 (sccm) 15
Ar (sccm) 15
Pressure (mTorr) 5
Coil power (W) 0
Platen power (W) 30
Temperature (oC) 20
Spacers (mm) 100 mm

Results

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