Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions

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Latest revision as of 10:38, 9 June 2023

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All contents by DTU Nanolab staff.


Deposition of ITO

ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O2.

We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:

Comparison of the methods for deposition of ITO

Sputter-System(Lesker) Sputter-System Metal-Oxide(PC1)
Generel description
  • RF sputtering of an ITO target - reactive sputtering possible
  • RF sputtering of an ITO target - reactive sputtering possible (not recommended due to arching)
  • Pulsed DC sputtering of an ITO target - reactive sputtering possible
Stoichiometry
  • Not known
Film Thickness
  • few nm - ~ 200 nm
  • few nm - ~ 1 μm
Deposition rate
  • 0.5-2 nm/min
Step coverage
  • unknown
  • unknown
Process Temperature
  • Up to 400 °C (tool limit)
  • Up to 600 °C (tool limit)
Substrate size
  • chips
  • 1x 100 mm wafer
  • 1x 150 mm wafer
  • chips
  • 10x 100 mm wafer
  • 10x 150 mm wafer
Allowed materials
  • almost any