Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions
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*In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|deposition conditions]]. | *In:Sn:O ~ 39:3:58. Can be tuned by altering [[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)#Stoichiometry|deposition conditions]]. | ||
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