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Specific Process Knowledge/Thin film deposition/Deposition of ITO: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O<sub>2</sub>.
ITO (indium tin oxide) can be deposited by sputtering here at DTU Nanolab. An ITO target is used and it may be sputtered either non-reactively in Ar or reactively in a mixture of Ar and O<sub>2</sub>.


*[[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|Deposition conditions and a few results]] for ITO deposited for the acceptance test of the Sputter-System Metal-Oxide(PC1)
We have acquired a lot of knowledge about ITO deposition in our Cluster Lesker system, and results are summarized on a page here:
 
*[[Specific_Process_Knowledge/Thin_film_deposition/Sputtering of ITO in Sputter-System Metal-Oxide (PC1)|Sputtering of ITO in Sputter-System Metal-Oxide (PC1)]].


==Comparison of the methods for deposition of ITO==
==Comparison of the methods for deposition of ITO==
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