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Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Jmli (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,580 edits
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{{Template:Peg2configcontent1
{{Template:Peg2configcontent1
|ItemName= Etch of nickel and chromium
|ItemName= Etch of chromium and silicon nitrides
|ItemConfiguration= Recipes for etching nickel and chromium have been developed
|ItemConfiguration= Recipes for etching chromium and silicon nitrides have been developed.
|ItemComment= The cross contamination consequences have yet to be determined
|ItemComment= The  
}}
{{Template:Peg2configcontent1
|ItemName= Electrostatic clamping, chip bonding with Galden oil and helium backside cooling are no longer being used.
|ItemConfiguration= The processes run in Pegasus 2 operate at such low powers that they do not require very efficient cooling. It has therefore been decided that
* Electrostatic clamping of carriers/substrates
* Helium backside cooling
* Using bonding procedures such as droplets of Galden oil to increase thermal contact between chips and carrier
will no longer be required.
|ItemComment= The
}}
}}
{{Template:Peg2configcontent1
{{Template:Peg2configcontent1
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