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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
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|Plasma Enhanced Chemical Vapor Deposition has the advantage that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature
|Plasma Enhanced Chemical Vapor Deposition has the advantage that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature
|Sputter deposition: can be done on top of a large range of materials
|Sputter deposition: can be done on top of a large range of materials
|Sputter deposition: can be done on top of a large range of materials.  
|Sputter deposition: can be done on top of a large range of materials.
|Atomic Layer deposition provides an uniform layer with a good covering even on high aspect ratio structures.
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*Slightly O-poor as deposited non-reactively (O:Si=64:36), may be tunable if reactively sputtered with O<sub>2</sub> (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|here]])
*Slightly O-poor as deposited non-reactively (O:Si=64:36), may be tunable if reactively sputtered with O<sub>2</sub> (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|here]])
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*SiO<sub>2</sub>
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* Thin layers (up to 200-300 nm)
* Thin layers (up to 200-300 nm)
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* Thin layers (up to 50 nm)
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*Room temp to 600 °C
*Room temp to 600 °C
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*300 °C
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*Medium. Perhaps use of HIPIMS can improve step coverage (requires significant process development)
*Medium. Perhaps use of HIPIMS can improve step coverage (requires significant process development)
*Deposition on one side of the substrate
*Deposition on one side of the substrate
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*Excellent.
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*Less dense film
*Less dense film
*Incorporation of hydrogen in the film
*Incorporation of hydrogen in the film
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*
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*
*
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*Many smaller pieces or
*Many smaller pieces or
*up to 10x 4" or 6" wafer
*up to 10x 4" or 6" wafer
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*Several small samples
*1 50 mm wafers
*1 100 mm wafers
*1 150 mm wafer
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*Almost any that will not degas and is not very poisonous  
*Almost any that will not degas and is not very poisonous  
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet]
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*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Al, Al<sub>2</sub>O<sub>3</sub>
*Ti, TiO<sub>2</sub>
*Other metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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