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Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
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Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,179 edits
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|AR-600-71, 1165 Remover
|AR-600-71, 1165 Remover
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br>  
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br>  
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ARP617|Copolymer AR-P 617]]'''
|Positive
|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|[[media:AR_P617.pdf‎|AR_P617.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|PGME
|AR 600-55, MIBK:IPA
|
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]


|-
|-
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