|
|
| Line 362: |
Line 362: |
| <br clear="all" /> | | <br clear="all" /> |
| --> | | --> |
| ==Plasma Asher 2==
| |
| [[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]]
| |
|
| |
| '''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2 click here]'''
| |
|
| |
| The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
| |
|
| |
| In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
| |
|
| |
| The typical process parameters when operating the equipment:
| |
| *Photeresist stripping
| |
| Pressure: 0.8 - 1.0 mbar
| |
|
| |
| Gas: O2
| |
|
| |
| Power: 600 - 1000 watts
| |
|
| |
| Time: 5 -30 min., depending on photoresist type and thickness
| |
|
| |
| A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18.
| |
|
| |
| A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min
| |
|
| |
| Be sure to wait for cooling if the mashine has been used at 1000W right before.
| |
| At a load at 2 Fused silica wafers resist removed 0.01-01,5um
| |
|
| |
| The other materials have not been tested yet.
| |
|
| |
| '''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager]'''
| |
|
| |
| ===Process Information===
| |
| *[[Specific Process Knowledge/Lithography/Descum|Descum]]
| |
|
| |
| <br clear="all" />
| |
|
| |
| =Resist Strip= | | =Resist Strip= |
|
| |
|
