Specific Process Knowledge/Wafer cleaning/RCA: Difference between revisions
| Line 15: | Line 15: | ||
*RCA2: 10 min | *RCA2: 10 min | ||
*DI water rinsing (dumping three times) | *DI water rinsing (dumping three times) | ||
*Optional: HF: 30 sec (avoid it if you have oxide as the top layer) | *Optional: HF: 30 sec (avoid it if you have a very thin oxide (0-200 Å) as the top layer) | ||
*DI water rinsing (dumping three times) | *DI water rinsing (dumping three times) | ||
For procedure details please look in the user manual positioned in LabManager. | For procedure details please look in the user manual positioned in LabManager. | ||