Specific Process Knowledge/Lithography/SU-8: Difference between revisions
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* a standard process consist of spinning, soft bake, exposure, post-exposure bake and development. Please notice that the entire process must be done continuously, meaning that it is not recommendable to spin the resist and then wait until the next day before exposing. | * a standard process consist of spinning, soft bake, exposure, post-exposure bake and development. Please notice that the entire process must be done continuously, meaning that it is not recommendable to spin the resist and then wait until the next day before exposing. | ||
* exposure using radiation above 350 nm is recommended. [[Specific Process Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6-2]] both have i-line filters. | * exposure using radiation above 350 nm is recommended. [[Specific Process Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|Aligner: MA6-2]] both have i-line filters, and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_Maskless_01|Aligner: Maskless 01 (MLA1)]] has a 365nm source. | ||
* Controlled soft and post-exposure bakes are recommended and must be optimized for the specific application, but baseline parameters which can be used as a starting point will be given. | * Controlled soft and post-exposure bakes are recommended and must be optimized for the specific application, but baseline parameters which can be used as a starting point will be given. | ||