Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions
Appearance
No edit summary |
|||
| Line 48: | Line 48: | ||
! | ! | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]]) | ||
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]]) | ||
| Line 59: | Line 58: | ||
! General description | ! General description | ||
| | | | ||
E-beam deposition of Aluminium | E-beam deposition of Aluminium | ||
| Line 79: | Line 76: | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion etch | |Ar ion etch | ||
| | | | ||
| | | | ||
|RF Ar clean | |RF Ar clean | ||
| | |||
|RF Ar clean | |RF Ar clean | ||
| | | | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10Å to 1 µm* | |10Å to 1 µm* | ||
|10Å to 1 µm* | |10Å to 1 µm* | ||
|10Å to ~0.5µm | |10Å to ~0.5µm | ||
|10Å to ~0.5µm (very time consuming ) | |10Å to ~0.5µm (very time consuming ) | ||
|10Å to ~0.5µm | |10Å to ~0.5µm | ||
|10Å to 0. | |10Å to 0.12 µm | ||
|10Å to 1 µm | |10Å to 1 µm* | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" | ||
! Deposition rate | ! Deposition rate | ||
|0.5Å/s to 15Å/s | |0.5Å/s to 15Å/s | ||
|10Å/s to 15Å/s | |10Å/s to 15Å/s | ||
| Line 113: | Line 107: | ||
| | | | ||
*Up to 4x6" or 3x8" wafers | *Up to 4x6" or 3x8" wafers | ||
*smaller pieces | *smaller pieces | ||
| | | | ||
| Line 145: | Line 136: | ||
| | | | ||
Approx. 20 min | Approx. 20 min | ||
| | | | ||
Approx. 1 hour | Approx. 1.5 hour | ||
| | | | ||
Approx. 1 hour | Approx. 1.5 hour | ||
| | | | ||
Approx. 10 min | Approx. 10 min | ||
| Line 156: | Line 145: | ||
Approx. 5 min plus 6 min transfer time | Approx. 5 min plus 6 min transfer time | ||
| | | | ||
Approx. 1 hour | Approx. 1,5 hour | ||
| | | | ||
Approx. 15 min | Approx. 15 min | ||
| Line 164: | Line 153: | ||
| | | | ||
* Silicon wafers | * Silicon wafers | ||
* Quartz wafers | * Quartz wafers | ||
| Line 210: | Line 194: | ||
* Metals | * Metals | ||
| | | | ||
| Line 264: | Line 240: | ||
It is possible to tilt the substrate. | It is possible to tilt the substrate. | ||
|'''*''' Thickness above 600 nm: ask for permission. | |'''*''' Thickness above 600 nm: ask for permission. | ||
| Line 273: | Line 247: | ||
| | | | ||
| | | | ||
|''' | |'''**'''Thickness above 120 nm: ask for permission | ||
| | | | ||
|} | |} | ||
'''*''' ''For | '''*''' ''For cumulative deposition above 600 nm please write to metal@nanolab.dtu.dk to make sure there will be enough Al for your deposition'' | ||
==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation == | ==Aluminium deposition on ZEP520A for lift-off - comparison of thermal and e-beam evaporation == | ||