Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions
| Line 104: | Line 104: | ||
|10Å/s to 15Å/s | |10Å/s to 15Å/s | ||
|Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s | |Depending on [[/Sputter rates for Al|process parameters]], up to ~2.5 Å/s | ||
|Depending on process parameters at least up to 0.7 Å/s | |Depending on [[/Al sputtering in Sputter System (Lesker) |process parameters]] at least up to 0.7 Å/s | ||
|Depending on process parameters at least up to 1.3 Å/s. See conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | |Depending on process parameters at least up to 1.3 Å/s. See conditions [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Standard_recipe_performance|here]] | ||
|~1.5 Å/s to 2 Å/s | |~1.5 Å/s to 2 Å/s | ||