Specific Process Knowledge/Characterization/Stress measurement: Difference between revisions
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===When a thin film is deposited on both sides of the wafer=== | ===When a thin film is deposited on both sides of the wafer=== | ||
#Deposit the thin film | #Deposit the thin film | ||
#Make a pre-stress measurement. Measure the wafer bow on one of the profilometers ([[Specific Process Knowledge/Characterization/Profiler#Dektak XTA_new stylus profiler|Dektak XTA_new]] or [[Specific Process Knowledge/Characterization/Profiler# | #Make a pre-stress measurement. Measure the wafer bow on one of the profilometers ([[Specific Process Knowledge/Characterization/Profiler#Dektak XTA_new stylus profiler|Dektak XTA_new]] or [[Specific Process Knowledge/Characterization/Profiler#Stylus Profiler (Tencor P17)|P17 Stylus profiler]]). Save the measurement. It is a good idea to measure across most of the wafer (at least along 70% of the wafer length) in two directions perpendicular to each other. Using the P17 profiler you can also measure a radially resolved map of the wafer stress with up to 5° resolution. | ||
#Remove the thin film from one side of the wafer. If it is a single side polished wafer, then remove it on the non-polished side. | #Remove the thin film from one side of the wafer. If it is a single side polished wafer, then remove it on the non-polished side. | ||
#Make a post-stress measurement. Measure the wafer bow again: | #Make a post-stress measurement. Measure the wafer bow again: | ||