Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-3/DREM/DREM 0.5kW v2.3: Difference between revisions

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{| border="2" cellpadding="0" cellspacing="0" style="text-align:center;"
|-
! rowspan="2" width="40"| Date
! colspan="2" width="120"| Substrate Information
! colspan="4" | Process Information
! colspan="3" width="200" | Results
|-
! width="30" | Wafer info
! width="40" | Material/ Exposed area
! width="40" | Condi- tioning
! width="40" | Recipe
! width="40" | Wafer ID
! width="40" | Comments
! width="400" |SEM images
! width="100" |Picoscope
! width="600" |Numbers
|-
|16/6-2021
|150 mm wafer with standard DUV resist and PegReticle pattern
|Si /  25-50%
|C06692.03 pegreticle wafer
|nanolab/ jmli / DREM / DREM 0.5kW v2.3, 50 cycles or 4:35 minutes
|C06694.01
|[http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=388881 Process log entry]
|
[[file:C06694.01c153.png |120px|frameless ]]
[[file:C06694.01c154.png |120px|frameless ]]
[[file:C06694.01c155.png |120px|frameless ]]
[[file:C06694.01c156.png |120px|frameless ]]
[[file:C06694.01c157.png |120px|frameless ]]
[[file:C06694.01c158.png |120px|frameless ]]
| <!-- Add picos here:[[file:S014009 1.gif |120px|frameless ]] -->
|
{| {{table}}
| align="center" style="background:#f0f0f0;"|'''SEM image:'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06694.01c155.png c155]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06694.01c157.png c157]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06694.01c153.png c153]'''
|-
| Trench width (um)||0.21||0.79||0.84
|-
| Etched depth (um)||1.08||1.27||1.41
|-
| Etch rate (um/min)||0.24||0.28||0.31
|-
| <span title="The cycles will vary if the aspect ratio is large "> Etch rate (nm/cyc) </span>||21.61||25.46||28.14
|-
| Sidewall bowing (%)||0||1||0
|-
| Sidewall angle (degs)||90.31||90.19||90.3
|-
| Bottom bowing (%)||40.66||22.98||21.46
|-
|Aspect ratio||5.04||1.6||1.67
|-
|}
|-
|16/6-2021
|150 mm wafer with standard DUV resist and a pattern of pillars of variable densities/widths
|Si /  10%
|C06695.14
|nanolab/ vy / DREM / DREM 0.5 kW v2.3 75 cyc or 6:52.5 mins
|C06694.01
|[http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=388881 Process log entry]
|
[[file:C06695.14c159.png |120px|frameless ]]
[[file:C06695.14c160.png |120px|frameless ]]
[[file:C06695.14c161.png |120px|frameless ]]
[[file:C06695.14c162.png |120px|frameless ]]
[[file:C06695.14c163.png |120px|frameless ]]
| <!-- Add picoscope links here:[[file:C06694.14 |120px|frameless ]] -->
|
{| {{table}}
| align="center" style="background:#f0f0f0;"|'''SEM image:'''
|-
| Trench width (um)
|-
| Etched depth (um)
|-
| Etch rate (um/min)
|-
| <span title="The cycles will vary if the aspect ratio is large "> Etch rate (nm/cyc) </span>
|-
| Sidewall bowing (%)
|-
| Sidewall angle (degs)
|-
| Bottom bowing (%)
|-
|Aspect ratio
|-
|}
|-
|27/9-2021
|DUV litho wafer,
|Si /  25-50%
|C06873.01
|nanolab/ jmli / DREM / DREM 0.5kW peg3, 100 cycles or 9:10 minutes
|C06873.02
|30 sec O2 0.2kW barc[http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&usageid=397212 Process log entry]
|
[[file:C06873.02c156.png |120px|frameless ]]
[[file:C06873.02c157.png |120px|frameless ]]
[[file:C06873.02c158.png |120px|frameless ]]
[[file:C06873.02c159.png |120px|frameless ]]
[[file:C06873.02c160.png |120px|frameless ]]
[[file:C06873.02c161.png |120px|frameless ]]
[[file:C06873.02c162.png |120px|frameless ]]
[[file:C06873.02c163.png |120px|frameless ]]
| <!-- Add picoscope links here:[[file:C06873.02 |120px|frameless ]] -->
|
{| {{table}}
| align="center" style="background:#f0f0f0;"|'''SEM image:'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06873.02c157.png c157]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06873.02c158.png c158]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06873.02c159.png c159]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06873.02c161.png c161]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06873.02c162.png c162]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06873.02c160.png c160]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06873.02c156.png c156]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:C06873.02c163.png c163]'''
|-
| Trench width (um)||0.17||0.22||0.25||0.42||0.43||0.52||0.55||2.03
|-
| Etched depth (um)||1.3||1.36||1.4||1.56||1.57||1.62||1.64||1.87
|-
| Etch rate (um/min)||0.14||0.15||0.15||0.17||0.17||0.18||0.18||0.2
|-
| <span title="The cycles will vary if the aspect ratio is large "> Etch rate (nm/cyc) </span>||13||14||14||16||16||16||16||19
|-
| Sidewall bowing (%)||0||0.2||0.2||0.3||0.4||0.1||-0.1||0.1
|-
| Sidewall angle (degs)||89.38||89.33||89.41||89.29||89.43||89.44||89.4||89.21
|-
| Bottom bowing (%)||34.34||24.69||27.76||23.55||22.1||20.81||23.56||11.77
|-
|Aspect ratio||8.11||6.63||5.94||3.85||3.77||3.22||3.1||0.93
|-
|}
|-
|}

Revision as of 10:27, 21 January 2022

Date Substrate Information Process Information Results
Wafer info Material/ Exposed area Condi- tioning Recipe Wafer ID Comments SEM images Picoscope Numbers
16/6-2021 150 mm wafer with standard DUV resist and PegReticle pattern Si / 25-50% C06692.03 pegreticle wafer nanolab/ jmli / DREM / DREM 0.5kW v2.3, 50 cycles or 4:35 minutes C06694.01 Process log entry

SEM image: c155 c157 c153
Trench width (um) 0.21 0.79 0.84
Etched depth (um) 1.08 1.27 1.41
Etch rate (um/min) 0.24 0.28 0.31
Etch rate (nm/cyc) 21.61 25.46 28.14
Sidewall bowing (%) 0 1 0
Sidewall angle (degs) 90.31 90.19 90.3
Bottom bowing (%) 40.66 22.98 21.46
Aspect ratio 5.04 1.6 1.67
16/6-2021 150 mm wafer with standard DUV resist and a pattern of pillars of variable densities/widths Si / 10% C06695.14 nanolab/ vy / DREM / DREM 0.5 kW v2.3 75 cyc or 6:52.5 mins C06694.01 Process log entry

SEM image:
Trench width (um)
Etched depth (um)
Etch rate (um/min)
Etch rate (nm/cyc)
Sidewall bowing (%)
Sidewall angle (degs)
Bottom bowing (%)
Aspect ratio
27/9-2021 DUV litho wafer, Si / 25-50% C06873.01 nanolab/ jmli / DREM / DREM 0.5kW peg3, 100 cycles or 9:10 minutes C06873.02 30 sec O2 0.2kW barcProcess log entry

SEM image: c157 c158 c159 c161 c162 c160 c156 c163
Trench width (um) 0.17 0.22 0.25 0.42 0.43 0.52 0.55 2.03
Etched depth (um) 1.3 1.36 1.4 1.56 1.57 1.62 1.64 1.87
Etch rate (um/min) 0.14 0.15 0.15 0.17 0.17 0.18 0.18 0.2
Etch rate (nm/cyc) 13 14 14 16 16 16 16 19
Sidewall bowing (%) 0 0.2 0.2 0.3 0.4 0.1 -0.1 0.1
Sidewall angle (degs) 89.38 89.33 89.41 89.29 89.43 89.44 89.4 89.21
Bottom bowing (%) 34.34 24.69 27.76 23.55 22.1 20.81 23.56 11.77
Aspect ratio 8.11 6.63 5.94 3.85 3.77 3.22 3.1 0.93
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