Specific Process Knowledge/Etch/DRIE/Pegasus-3/DREM/DREM 0.5kW v2.3

Date	Substrate Information		Process Information				Results
	Wafer info	Material/ Exposed area	Condi- tioning	Recipe	Wafer ID	Comments	SEM images	Picoscope	Numbers
16/6-2021	150 mm wafer with standard DUV resist and PegReticle pattern	Si / 25-50%	C06692.03 pegreticle wafer	nanolab/ jmli / DREM / DREM 0.5kW v2.3, 50 cycles or 4:35 minutes	C06694.01	Process log entry			SEM image: c155 c157 c153 Trench width (um) 0.21 0.79 0.84 Etched depth (um) 1.08 1.27 1.41 Etch rate (um/min) 0.24 0.28 0.31 Etch rate (nm/cyc) 21.61 25.46 28.14 Sidewall bowing (%) 0 1 0 Sidewall angle (degs) 90.31 90.19 90.3 Bottom bowing (%) 40.66 22.98 21.46 Aspect ratio 5.04 1.6 1.67
16/6-2021	150 mm wafer with standard DUV resist and a pattern of pillars of variable densities/widths	Si / 10%	C06695.14	nanolab/ vy / DREM / DREM 0.5 kW v2.3 75 cyc or 6:52.5 mins	C06694.01	Process log entry			SEM image: Trench width (um) Etched depth (um) Etch rate (um/min) Etch rate (nm/cyc) Sidewall bowing (%) Sidewall angle (degs) Bottom bowing (%) Aspect ratio
27/9-2021	DUV litho wafer,	Si / 25-50%	C06873.01	nanolab/ jmli / DREM / DREM 0.5kW peg3, 100 cycles or 9:10 minutes	C06873.02	30 sec O2 0.2kW barcProcess log entry			SEM image: c157 c158 c159 c161 c162 c160 c156 c163 Trench width (um) 0.17 0.22 0.25 0.42 0.43 0.52 0.55 2.03 Etched depth (um) 1.3 1.36 1.4 1.56 1.57 1.62 1.64 1.87 Etch rate (um/min) 0.14 0.15 0.15 0.17 0.17 0.18 0.18 0.2 Etch rate (nm/cyc) 13 14 14 16 16 16 16 19 Sidewall bowing (%) 0 0.2 0.2 0.3 0.4 0.1 -0.1 0.1 Sidewall angle (degs) 89.38 89.33 89.41 89.29 89.43 89.44 89.4 89.21 Bottom bowing (%) 34.34 24.69 27.76 23.55 22.1 20.81 23.56 11.77 Aspect ratio 8.11 6.63 5.94 3.85 3.77 3.22 3.1 0.93