Specific Process Knowledge/Thermal Process/RTP Jipelec 2: Difference between revisions

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 The annealing is done in a process chamber on the machine, in which the samples are heated very rapidly by use of infra red lamps placed in the top of the chamber, directly above the sample(s). The chamber walls are cooled and remains cold during the annealing.
-Samples can be wafers (2". 4", 6" and 8") or smaller samples made of different materials. In the process chamber, the samples are placed on quartz pins, either directly on the pins (only wafers) or on a graphite sucseptor or a Si dummy wafer.
+Samples can be wafers (2". 4", 6" and 8") or smaller samples made of different materials. In the process chamber, the samples are normally placed on a 6" graphite sucseptor, but they can also be placed on a Si dummy wafer or directly in the chamber (only wafers).
 The maximum annealing temperature is 1200 C. For temperatures above 700 C the annealing time is limited as can be seen in the table below.
-The temperature is measured by either a thermocouple or an optical pyrometer. The temperature is regulated by a PID controller, thus the PID values will have to be optimized for each susceptor size and for each wafer size and thickness, and it is important to select the right PID table for each process.
+The temperature is measured by either a thermocouple or an optical pyrometer. The temperature is regulated by a PID controller, thus the PID values will have to be optimized for process and for each each susceptor or wafer size and thickness and for each annealing temperature, temperature ramping, pressure and gas flow settings etc. The responsible persons will help with the optimization of the PID parameters.
 Annealings can be done at atmospheric pressure or in vacuum. It is also possible to apply a flow of either nitrogen or argon during the annealing, and forming gas (4 % H<sub>2</sub>/96 % N<sub>2</sub>) will be connected later.