Specific Process Knowledge/Thermal Process/Resist Pyrolysis Furnace

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===EXPIRED! The Resist Pyrolysis furnace has been removed from the cleanroom August 2019. Use the Multipurpose Anneal furnace instead.===

Resist Pyrolysis Furnace

The Resist Pyrolysis furnace located in cleanroom area A-5

The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000 ^oC in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample.

If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed. Thus, for each process it is important to include a step with a high nitrogen flow at a lower temperature, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.

During processing the furnace is rapidly heated by use of six long heating lamps situated around the furnace tube. The furnace is not heated in the ends, and this affects the temperature uniformity in the furnace. Cooling is done (rather slowly) by use of cooling fans.

The furnace is purged with a controlable nitrogen flow.

There is no vacuum on the furnace.

The user manual, user APV and contact information can be found in LabManager:

Resist Pyrolysis Furnace

Process information

There are no standard processes on the furnace.

Equipment performance and process related parameters

Equipment		Reist Pyrolysis Furnace
Purpose		Pyrolysis of different resist layers to form conductive structures
Process parameter range	Temperature	Max 1000 oC Temperature ramp-up rate: Max 10 oC/min Temperature ramp-down rate: Relative slow (depending on the furnace temperature)
	Process gasses	N2
	Vacuum	No
	Nitrogen flows	Flow 1: Max 660 liter/hour Flow 2: Max 3500 liter/hour
Substrates	Batch size	1-4 50 mm wafers (placed on Si carrier wafers) 1-5 100 mm wafers (place on Si carrier wafers or in a horizontal wafer boat) Several smaller samples if these are placed on a support wafer
	Allowed materials	Silicon Silicon oxide Silicon nitride Polysilicon Quartz AZ resist (prebaked) SU-8 (prebaked) Other resist - Permission required