Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions
Appearance
No edit summary |
No edit summary |
||
| Line 22: | Line 22: | ||
! Pre-clean | ! Pre-clean | ||
|Ar ion source | |Ar ion source | ||
| | |none | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
! Layer thickness | ! Layer thickness | ||
|10 Å - | |10 Å - 600 nm* | ||
|10 Å | |10 Å - 600 nm* | ||
|- | |- | ||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
| Line 42: | Line 42: | ||
*smaller wafers and pieces | *smaller wafers and pieces | ||
| | | | ||
* | *Up to 6x6" wafers (deposition on one wafer at the time) | ||
* | *Up to 6x4" wafers (deposition on one wafer at the time) | ||
* | *smaller wafers and pieces | ||
|- | |- | ||
|-style="background:Lightgrey; color:black" | |-style="background:Lightgrey; color:black" | ||
| Line 57: | Line 57: | ||
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | *See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | ||
| | | | ||
* Silicon oxide | *Silicon oxide | ||
* Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
* Photoresist | *Photoresist | ||
* PMMA | *PMMA | ||
* Mylar | *Mylar | ||
*Metals | |||
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet] | |||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||