Specific Process Knowledge/Lithography/Descum: Difference between revisions

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 Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.
 Recipe setting was the same as in previous test in September 2019: 70ml/min O2, 70 ml/min N2, power 150W, different ashing time 1, 2, 3, 5 and 7 min run. Plasma Asher was cold before use, we observed minor temperature rise during processing, but not more than 5 degrees. Starting chambers pressure was around 0, 5 mbar.
+'''1,5 um AZ5214E resist'''
+{| {{table}}
+| align="center" |
+{| border="1" cellspacing="1" cellpadding="2"  align="center"
+|- style="background:LightGrey"
+|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
+|-
+|'''Etched Thickness (nm)'''|| 6,28 || 102,99 || 76,92 || N/A || N/A
+|-
+|}
+|}
+'''1,5 um AZ5214E resist placed horizontally in the carrier'''
+{| {{table}}
+| align="center" |
+{| border="1" cellspacing="1" cellpadding="2"  align="center"
+|- style="background:LightGrey"
+|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
+|-
+|'''Etched Thickness (nm)'''|| 63,03 || 143,32 || 304,29  || 372,59 || N/A
+|-
+|}
+|}
+'''1,5 um AZ701MiR resist'''
+{| {{table}}
+| align="center" |
+{| border="1" cellspacing="1" cellpadding="2"  align="center"
+|- style="background:LightGrey"
+|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
+|-
+|'''Etched Thickness (nm)'''|| 6,28 || 102,99 || 76,92 || N/A || N/A
+|-
+|}
+|}
+'''1,5 um AZ 2020nLOF resist'''
+{| {{table}}
+| align="center" |
+{| border="1" cellspacing="1" cellpadding="2"  align="center"
+|- style="background:LightGrey"
+|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
+|-
+|'''Etched Thickness (nm)'''|| 6,28 || 102,99 || 76,92 || N/A || N/A
+|-
+|}
+|}
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 ===[http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_2 Plasma asher 2]===