Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Crystal_Settings click here]''' | ||
[[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] | <!-- [[Image:Tooling_factor.jpg|700px|right|thumb|How to calculate the tooling factor. Taken from the manufacture manual]] --> | ||
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Revision as of 13:57, 22 June 2023
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| Material parameters for using the crystal monitors | |||||
| Material | Density | Z ratio | |||
|---|---|---|---|---|---|
| TiO2 | 4.260 | 0.400 | |||
| SiO2 | 2.648 | 1.000 | |||
| Si | 2.320 | 0.712 | |||
| Settings for Crystal thickness monitor 1 | |||||
| Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
|---|---|---|---|---|---|
| 2014-07-22 | 157.3% (wafer center) | ||||
| 2015-09-08 | 132 % | B2 | B3 | ||
| C | C1 | C2 | C3 | ||
| D | D1 | D2 | D3 | ||
| Settings for crystal thickness monitor 2 | |||||
| Date | Tooling factor: TiO2 | Tooling factor: SiO2 | Tooling factor: Si | ||
|---|---|---|---|---|---|
| A | A1 | A2 | A3 | ||
| B | B1 | B2 | B3 | ||
| C | C1 | C2 | C3 | ||
| D | D1 | D2 | D3 | ||