Specific Process Knowledge/Etch/III-V ICP/SiO2

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Parameter	Parameter settings
Coil Power [W]	200
Platen Power [W]	25
Platen temperature [oC]	20
CF4 flow [sccm]	20
H2 flow [sccm]	10
Pressure [mTorr]	3

-0.4%-0.8% ((max-min)/2*Average) (bghe 2019-2021 5 tests)

Results	SiO2 Etch Slow Test by Artem Shikin @ Fotonik
Etch rate of PECVD BPSG	39.4nm/min (22-01-2016)
Etch rate in thermal oxide	48nm/min (bghe 17-01-2017)- whole 4" wafer with capton tape 40-50 nm/min bghe (2019-2021 5 tests)
Selectivity to resist [:1]	Not known
Etch rate in silicon	bghe@Nanolab 20190117 35 nm/min (middle of the wafers with 80% load) 36 nm/min (edge of the wafers with 80% load)
Wafer uniformity (100mm)
Profile [o]	Not known
Wafer uniformity map (click on the image to view a larger image)	Not known
SEM profile images	NONE
Comment	Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s