Specific Process Knowledge/Etch/III-V ICP/SiO2: Difference between revisions
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|Etch rate in thermal oxide | |Etch rate in thermal oxide | ||
|'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape | | | ||
'''48nm/min''' (bghe 17-01-2017)- whole 4" wafer with capton tape <br> | |||
'''40-50 nm/min''' bghe (2019-2021 5 tests) | |||
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|Selectivity to resist [:1] | |Selectivity to resist [:1] | ||
Revision as of 14:07, 17 August 2021
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| Parameter | Parameter settings |
|---|---|
| Coil Power [W] | 200 |
| Platen Power [W] | 25 |
| Platen temperature [oC] | 20 |
| CF4 flow [sccm] | 20 |
| H2 flow [sccm] | 10 |
| Pressure [mTorr] | 3 |
| Results | SiO2 Etch Slow Test by Artem Shikin @ Fotonik |
|---|---|
| Etch rate of PECVD BPSG | 39.4nm/min (22-01-2016) |
| Etch rate in thermal oxide |
48nm/min (bghe 17-01-2017)- whole 4" wafer with capton tape |
| Selectivity to resist [:1] | Not known |
| Etch rate in silicon |
bghe@Nanolab 20190117
|
| Wafer uniformity (100mm) | |
| Profile [o] | Not known |
| Wafer uniformity map (click on the image to view a larger image) | Not known |
| SEM profile images | NONE |
| Comment | Tested on a plane BPSG layer. The etch rate is much lower for an etch time of e.g. 5s |