Specific Process Knowledge/Etch/DRIE-Pegasus/processC: Difference between revisions
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== Process C == | == Process C == | ||
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Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %. | Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %. | ||
Revision as of 14:43, 2 February 2023
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Process C
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.
The 100 mm wafers had an Al mask made by lift-off:
- 80 nm of spin coated ZEP520A E-beam resist
- Patterned by E-beam lithography
- 20 nm Al deposited and patterned by lift-off
- ~ 99 % etch load
| Parameter | Specification | Average result |
|---|---|---|
| Etch rate (nm/min) | Not specified | |
| Etched depth (nm) | 300 | |
| Scallop size (nm) | < 30 | |
| Profile (degs) | 85 +/- 5 | |
| Selectivity to resist | Not specified | |
| Undercut (nm) | < 30 | |
| Uniformity (%) | < 3.5 | |
| Repeatability (%) | <4 |
| Parameter | Etch | |||
|---|---|---|---|---|
| Gas flow (sccm) | SF6 38 C4F8 70 | |||
| Process time (mm:ss) | 01:30 | |||
| Pressure (mtorr) | 4 | |||
| Coil power (W) | 450 | |||
| Platen power (W) | 100 | |||
| Common | Temperature 10 degsree, HBC 10 torr, long funnel, with baffle & 100 mm spacers | |||
