Jump to content

Specific Process Knowledge/Lithography/EBeamLithography/JBX9500Manual: Difference between revisions

Lgpe (talk | contribs)
Mmat (talk | contribs)
mNo edit summary
Line 772: Line 772:
|- border="0"
|- border="0"
|[[File:SFOCUS.png|500px]]
|[[File:SFOCUS.png|500px]]
|SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU Danchip staff only.
|SFOCUS uses the bottom AE mark to measure the beam diameter while adjusting the objective lens. The objective lens is defined to be in focus where the machine finds the minimum beam diameter. This program can also be used to observe the depth of focus of a certain condition file. The graph shows the beam diameter versus position of objective lens. The position of the objective lens is converted to a difference in substrate height by executing the subprogram 'HCOEFFI'. <br><br> Please note, that SFOCUS does not work well for currents larger than 6 nA; at higher currents the focus should be set manually. This is to be done by DTU Nanolab staff only.


|}
|}