Specific Process Knowledge/Thin film deposition/thermalevaporator: Difference between revisions
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*approx. 13 % variation on a 4" wafer with 100 nm Al * | *approx. 13 % variation on a 4" wafer with 100 nm Al * | ||
*approx. 23 % variation on a 4" wafer with 100 nm Ag * | *approx. 23 % variation on a 4" wafer with 100 nm Ag * | ||
*approx. 10 % variation on a 6" wafer with 100 nm Cr * | |||
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''*'' ''The variation is defined as (Max-Min)/Average for the various points measured on the wafer. The max. point was around the center and the min. somewhere along the edge. The exact location of the maximum thickness depends how the sample is placed relative to the point of maximum material flux. Measurement by Rebecca Ettlinger, Nov. 2018.'' | ''*'' ''The variation is defined as (Max-Min)/Average for the various points measured on the wafer. The max. point was around the center and the min. somewhere along the edge. The exact location of the maximum thickness depends how the sample is placed relative to the point of maximum material flux. Measurement by Rebecca Ettlinger, Nov. 2018.'' | ||
==Quality control (QC) procedure for the Thermal evaporator== | ==Quality control (QC) procedure for the Thermal evaporator== | ||