Specific Process Knowledge/Etch/DRIE-Pegasus/DREM/DREM 2kW micro

DREM 2kW runs on complete set of Travka 5 to 80 % wafers

Date	Substrate Information		Process Information				Results
	Wafer info	Material/ Exposed area	Condi- tioning	Recipe	Wafer ID	Comments	Picoscope.	Numbers
27/4-2020	Travka05 wafer,	Si / 5%	S022327 DREM 2kW RF MU runs	nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes	S022328	Resist etch rate: 62 nm/min Process log entry		SEM image: a060 a059 a058 a057 a056 a055 a054 a053 a052 a051 a050 a049 Trench width (um) 2.08 3.1 4.2 6.08 10.22 15.27 25.26 39.7 50.5 99.82 150.09 299.56 Etched depth (um) 22.96 27.05 28.46 31.57 35.48 37.96 40.7 42.39 43.24 44.09 44.54 44.56 Etch rate (um/min) 2.09 2.46 2.59 2.87 3.23 3.45 3.7 3.85 3.93 4.01 4.05 4.05 Etch rate (nm/cyc) 153 180 190 210 237 253 271 283 288 294 297 297 Sidewall bowing (%) 0.1 0.6 0.2 0.6 0.1 0.2 -0.1 0.2 -0.4 -0.3 -0.3 -1.1 Sidewall angle (degs) 90.85 90.98 90.94 91.18 91.45 91.4 91.68 92.02 91.78 92.3 92.53 92.35 Bottom bowing (%) 16.93 14.87 20.32 20.1 19.02 17.6 14.71 13.78 10.7 6.84 4.53 2.34 Aspect ratio 9.5 7.61 6.12 4.71 3.2 2.35 1.54 1.03 0.84 0.43 0.29 0.15
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27/4-2020	Travka10 wafer,	Si / 10%	S022328 +1min TDESC clean	nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes	S022329	Resist etch rate: 60 nm/min Process log entry		SEM image: a061 a062 a063 a064 a065 a066 a067 a068 a069 a070 a071 a072 Trench width (um) 1.78 2.88 4.24 5.78 10.22 15.36 25.48 40.51 75.63 100.86 200.75 299.63 Etched depth (um) 21.26 24.82 27.54 31.1 35.34 38.21 41.17 42.98 44.58 45.15 45.16 44.68 Etch rate (um/min) 1.93 2.26 2.5 2.83 3.21 3.47 3.74 3.91 4.05 4.1 4.11 4.06 Etch rate (nm/cyc) 142 165 184 207 236 255 274 287 297 301 301 298 Sidewall bowing (%) -0.2 0.2 -0.1 0.2 -0.2 -0.4 -0.2 -0.8 -0.6 -0.7 -1.3 -1.4 Sidewall angle (degs) 90.47 90.61 90.35 90.98 90.78 91.08 91.11 91.43 91.97 91.55 92.07 92.37 Bottom bowing (%) 26.03 15.16 18.16 17.1 17.51 17.21 15.48 13.54 8.58 6.93 3.43 2.43 Aspect ratio 10.89 7.92 6.26 4.94 3.31 2.38 1.57 1.04 0.58 0.44 0.22 0.15
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27/4-2020	Travka20 wafer,	Si / 20%	S022329 +1min TDESC clean	nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes	S022330	Resist etch rate: 59 nm/min Process log entry		SEM image: a086 a085 a084 a083 a082 a081 a080 a078 a077 a076 a075 a074 a073 Trench width (um) 1.91 3.04 3.68 5.89 10.08 15.02 40.03 49.99 75.51 100.03 148.99 199.75 298.84 Etched depth (um) 21.58 24.69 26.33 29.81 33.68 36.25 40.32 40.95 41.68 41.77 41.84 42.1 41.82 Etch rate (um/min) 1.96 2.24 2.39 2.71 3.06 3.3 3.67 3.72 3.79 3.8 3.8 3.83 3.8 Etch rate (nm/cyc) 144 165 176 199 225 242 269 273 278 278 279 281 279 Sidewall bowing (%) 0.2 0.4 0.3 0.4 0.4 0.1 -0.1 -0.5 -0.6 -0.5 -0.6 -0.8 -0.3 Sidewall angle (degs) 90.77 90.91 90.93 91.14 91.39 91.49 91.66 91.91 91.96 92.38 92.57 92.96 93.05 Bottom bowing (%) 23.69 15.29 19.28 16.95 17.41 17.41 12.51 11.52 8.37 6.7 4.3 3.23 2.03 Aspect ratio 9.8 7.2 6.42 4.6 3.1 2.28 0.98 0.8 0.54 0.41 0.28 0.21 0.14
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27/4-2020	Travka35 wafer,	Si / 35%	S022330 +1min TDESC clean	nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes	S022331	Resist etch rate: 66 nm/min Process log entry		SEM image: a087 a088 a089 a090 a091 a092 a093 a094 a095 a096 a097 Trench width (um) 1.61 2.71 3.71 7.69 9.87 15.04 25.1 40.03 75.03 199.26 299.66 Etched depth (um) 18.41 22.24 24.41 29.54 31.11 33.55 35.77 37.1 37.96 38.18 38.24 Etch rate (um/min) 1.67 2.02 2.22 2.69 2.83 3.05 3.25 3.37 3.45 3.47 3.48 Etch rate (nm/cyc) 123 148 163 197 207 224 238 247 253 255 255 Sidewall bowing (%) -0.2 0.1 0.1 0.4 0.2 0.1 -0.3 -0.2 -0.5 -1.1 -1.2 Sidewall angle (degs) 90.33 90.75 90.89 91.13 91.07 91.31 91.34 91.69 91.84 92.49 92.44 Bottom bowing (%) 24.26 20.15 19.99 19.05 17.3 16.29 16.68 13.21 7.68 3.61 2.18 Aspect ratio 10.7 7.42 5.99 3.58 2.98 2.13 1.38 0.9 0.5 0.19 0.13
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27/4-2020	Travka50 wafer,	Si / 50%	S022331 +1min TDESC clean	nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes	S022332	Resist etch rate: 58 nm/min Process log entry		SEM image: a110 a109 a108 a107 a106 a105 a103 a102 a101 a099 a098 Trench width (um) 1.69 2.57 3.68 7.62 14.53 39.96 49.94 100.08 199.63 298.35 299.12 Etched depth (um) 17.88 20.47 22.58 27.07 30.78 33.82 34.11 34.67 34.66 34.26 34.54 Etch rate (um/min) 1.63 1.86 2.05 2.46 2.8 3.07 3.1 3.15 3.15 3.11 3.14 Etch rate (nm/cyc) 119 136 151 180 205 225 227 231 231 228 230 Sidewall bowing (%) 0.1 0.1 0.1 0.2 0.2 -0.5 -0.3 -0.8 -0.7 -2 -1.5 Sidewall angle (degs) 90.58 90.8 90.9 91.17 91.56 91.68 91.62 92.08 92.15 93.34 92.48 Bottom bowing (%) 24.2 20.91 19.84 16.14 17.61 12.38 10.43 5.77 3.26 1.83 1.96 Aspect ratio 9.58 7.18 5.61 3.32 2.01 0.83 0.67 0.34 0.17 0.11 0.11
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27/4-2020	Travka65 wafer,	Si / 65%	S022332 +1min TDESC clean	nanolab/ jmli / DREM / DREM 2kW, 150 cycles or 11:00 minutes	S022333	Resist etch rate: 58 nm/min Process log entry		SEM image: a111 a112 a113 a114 a115 a116 a117 a118 a119 a120 a121 a122 a123 a124 Trench width (um) 2.5 3.42 5.44 7.37 9.37 14.4 24.44 39.54 74.69 100.04 150.41 199.78 299.94 301.31 Etched depth (um) 18.9 20.55 23.1 24.82 26.16 28.28 30.04 31.02 31.45 30.89 31.28 30.52 31.47 31.59 Etch rate (um/min) 1.72 1.87 2.1 2.26 2.38 2.57 2.73 2.82 2.86 2.81 2.84 2.77 2.86 2.87 Etch rate (nm/cyc) 126 137 154 165 174 189 200 207 210 206 209 203 210 211 Sidewall bowing (%) 0 0.1 0.2 0.1 0.2 0.4 0.2 -0.3 -0.7 -1.4 -0.7 -0.8 -0.9 -1 Sidewall angle (degs) 90.75 90.75 90.96 91.03 91.19 91.48 91.42 91.86 91.99 91.88 91.81 92.79 92.54 92.34 Bottom bowing (%) 18.3 18.42 16.33 16.3 16.79 18.16 14.77 11.67 6.69 4.18 3.28 1.66 1.42 1.93 Aspect ratio 6.89 5.58 3.97 3.18 2.64 1.87 1.2 0.77 0.42 0.31 0.21 0.15 0.1 0.1
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27/4-2020	Travka80 wafer,	Si / 80%	S022333 + 1min TDESC clean	nanolab/ jmli / DREM / DREM 2kW nano, 150 cycles or 11:00 minutes	S022334	Resist etch rate: 79 nm/min Process log entry		SEM image: a136 a135 a134 a133 a126 a125 a132 a131 a130 a129 a128 a127 Trench width (um) 5.51 9.61 14.79 24.6 24.8 25.02 49.42 74.63 99.55 199.49 299.49 299.54 Etched depth (um) 21.45 24.21 25.99 27.45 27.15 27.35 28.03 28.38 28.48 28.23 28.52 29.16 Etch rate (um/min) 1.95 2.2 2.36 2.5 2.47 2.49 2.55 2.58 2.59 2.57 2.59 2.65 Etch rate (nm/cyc) 143 161 173 183 181 182 187 189 190 188 190 194 Sidewall bowing (%) 0.4 0.4 0.3 -0.3 -0.1 -0.6 -0.6 -0.7 -0.5 -1 -0.3 -1.2 Sidewall angle (degs) 90.95 91.1 91.34 91.44 91.19 91.14 91.35 91.86 91.65 92.32 91.7 92.54 Bottom bowing (%) 13.55 16.66 16.02 14.8 13.59 14.6 8.88 5.86 4.36 2.14 1.84 1.96 Aspect ratio 3.66 2.41 1.69 1.09 1.07 1.07 0.56 0.38 0.28 0.14 0.09 0.1
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